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Samsung starts production of 10 nm EUV DRAM: DDR5 on the Road

In addition to 10nm EUV-based DRAMs, Samsung plans to switch to DDR5 mass production next year.

Samsung Electronics has announced that it has successfully shipped one million DRAM modules manufactured with the industry's first 10nm class (D1x) DDR4 technology. The company claims this opens the door to the EUV process for next-generation products that will be used in advanced PC, mobile, business and data center systems. The technology giant appears to have adopted the EUV process to overcome problems with DRAM scaling.

EUV (Extreme Ultraviolet Lithography) differs from current traditional lithographic methods. This method uses extreme ultraviolet light with a much shorter wavelength. This allows much smaller electronic components to be made and increases production efficiency.

Jung-bae Lee, Deputy General Manager of Samsung Electronics DRAM Product and Technology, said:

“With the production of our new EUV-based DRAM, we demonstrate our commitment to providing revolutionary DRAM solutions to support our global IT customers. This significant development underscores how we can contribute to global IT innovation through timely development of the latest next generation process technologies and memory products for the superior memory market. ”

In addition, Samsung will begin mass production of DDR5 and LPDDR5 memory next year, using a production technology that will take advantage of ultraviolet lithography (EUV). Samsung predicts that with the EUV DDR5, production efficiency will double in 12-inch D1a wafers compared to older D1x wafers.

The company has not worked out what DDR5 has to offer. Production of advanced DDR5 RAMs will begin next year, but the end-user transition to DDR5 on PC will easily find the year 2022.

In addition, a second semiconductor production line will be launched in Pyeongtaek, South Korea in the second half of the year to meet the growing demand for the next generation of DRAM.

You may be interested in: Coronavirus did not affect the production sources of DRAM and NAND

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